GaN基电子和光电子器件的新型材料和器件结构
日期：2022/03/29 - 2022/03/29
学术讲座：GaN基电子和光电子器件的新型材料和器件结构
主讲人：Dr. Jie Song, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Science
时间：2022年3月29日（周二）上午9:00-10:00
地点：via Feishu
讲座摘要
As one of the third-generation semiconductors, GaN has been widely explored in many applications due to its superior physical and chemical properties, including high-efficiency light emitting diodes (LEDs), laser diodes (LDs), high-frequency and high-power electronic devices. GaN-based electronic and optoelectronic devices have exhibited a large potential market in solid-state lighting, high-resolution display, electrical vehicles, sustainable energy, 5G communication, etc. In this talk, Dr. Song will present his research work on the GaN-based high electron mobility transistors, semipolar GaN LEDs and LDs, micro-LEDs, and visible light communication (LiFi), with novel epitaxial structure to address the challenges and improve the device performance. He will also exhibit the research on eliminating the stacking-faults in semipolar GaN and achieving the world-first demonstration of CW semipolar GaN LDs grown on sapphire substrates.
主讲人简介
Dr. Jie Song is currently a professor in Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Science. He received his Ph.D. in School of Physics from Peking University. He had been worked as a postdoc research associate and associate research scientist in Department of Electrical Engineering at Yale University. His research has focused on the synthesis of GaN-based semiconductor materials, electronic and optoelectronic devices by MOCVD epitaxial growth, including high electron mobility transistors (HEMTs), light-emitting diodes (LEDs), and laser diodes (LDs). He is the author and co-author of 47 peer-reviewed papers, including 18 papers as first-author and corresponding author in leading journals, such as Advanced Materials, Applied Electronic Materials, Applied Materials & Interfaces, Applied Physics Reviews, etc.