离子束：不可或缺的芯片制造技术
日期：2023/07/13 - 2023/07/13
学术讲座：离子束：不可或缺的芯片制造技术
主讲人：Shengqiang Zhou, Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany
时间：2023年7月13日（周四）下午2:30
地点: 龙宾楼503会议室
讲座摘要
Ion implantation followed by thermal annealing is a well-established method to dope semiconductors, e.g. Si and Ge. This approach has been maturely integrated with the integrated circuit (IC) industry production line for area- and depth-selective n/p doping as well as for lifetime engineering. As a national lab in Germany, our center is running an Ion Beam Center for materials research. It is open free to the international community for fundamental research based on a proposal system. With my research department “Semiconductor Materials”, we are running unique annealing methods, including millisecond flash lamp annealing and nanosecond pulsed laser melting, to repair the ion beam induced damage and to activate the dopants. I will show diverse research examples by using ion beam. They include pushing the doping limits in semiconductors well above the solubility limits, functionalizing 2D materials and creating color centers for quantum technologies.
主讲人简介
周生强自2011年担任德国亥姆霍兹协会青年科学家研究组组长（Helmholtz Young Investigator Group Leader），2018年1月被提聘任为研究所半导体事业部的主任，工作集中在半导体材料，离子辐照材料改性、离子束分析技术，以及离子束在磁性功能材料方面的应用。获得17届国际离子束材料改性青年科学家奖，培养的博士生分别在国际半导体会议(ICPS)，磁学会议(ICM)、欧洲材料（EMRS）会议上获得青年科学家奖和最佳Poster奖。作为第一负责人申请到第三方经费约3百万欧元；发表文章超过300篇，引用超过8000次，H因子43。